By Jianye Li, Deli Wang, Ray R LaPierre
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Additional info for Advances in III-V Semiconductor Nanowires and Nanodevices
Nitride Nanocolumns for the Development of Light-Emitting Diode. IEEE Trans. Electron. , 2010, 57(1), 71-78. ; Cartwright, A. InN: A material with photovoltaic promise and challenges. J. Cryst. Growth, 2006, 288(2), 218-224. Mohammad, S. ; Salvador, A. ; Morkoc, H. Emerging Gallium Nitride Based Devices. Proc. IEEE, 1995, 83(10), 13061355. Mishra, U. ; Kazior, T. ; Wu, Y. F. GaN-Based RF power devices and amplifiers. Proc. IEEE, 2008, 96(2), 287305. Mukai, T. Recent progress in group-III nitride light-emitting diodes.
Lasing wavelengths in the range of 365 to 494 nm have been achieved using (InGaN/GaN)n quantum wells with various In compositions. PL spectra measured at ~ 250 kW cm-2 and 700 kW cm-2, below and above threshold, respectively for MQW (n=26) nanowire lasers with various In compositions are shown in Fig. 17. The lasing wavelengths are at ~ 383, 420, 452, and 478 nm, depending on the In compositions. The Q-factors are ~ 2,485. Solar Cells Vertically aligned, single-crystalline GaN/Si nanowires heterojunction solar cells have been demonstrated recently .
5(a), generally exhibit severely tapered morphology [32, 40, 55, 73, 76-77]. It can be seen that there are large variations in the wire diameter along the wire length and amongst the wire height. The poorly defined surface morphology severely limits the structural, optical and electrical properties of InN nanowires [55, 72-73, 78-79]. Recently, a novel growth technique, with the use of in situ deposited In seeding layers, has been developed to achieve non-tapered and nearly homogeneous InN nanowires using plasma-assisted MBE .